r semiconductor 1n5711, 1N6263 small signal schottky diodes features mechanical data absolute ratings(limiting values) electrical characteristics case: do-35 glass case polarity: color band denotes cathode end weight: approx. 0.13 gram for general purpose applications metal-on-silicon junction schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications these diodes are also available in the minmelf case with type designation ll5711 and ll6263. reverse breakover voltage at i =10ma r leakage current at v =50v r forward voltage drop at i =1ma f (ratings at 25 c ambient temperature unless otherwise specified) 200 0.41 400 1.0 2.0 1 60 70 i =15ma f reverse recovery time at i =i =5ma,recover to 0.1 r fr i junction capacitance at v =0v ,f=1mhz r thermal resistance v rrm v r v r v rrm mw a v v t stg p tot t j power dissipation (infinite heat sink) peak reverse voltage storage temperature range junction temperature maximum single cycle surge 10ms square wave -55 to+150 c c v v v v na pf ns c/w i fsm v f v f i r c j t rr 150 2.0 400 1) 70 60 do-35 dimensions in inches and (millimeters) 0.150(3.8) max 1.083(27.5) min 1.083(27.5) min 0.079(2.0) max dia 0.020(0.52) max dia 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature symbols units value 1n5711 1N6263 1n5711 1N6263 min. typ. max. unis symbols high temperature soldering guaranteed 260 c 10 seconds at terminals :/ component in accordance to rohs 2011 65 eu // r ja ma forward continuous current t =25 c a if 15 jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 2-5
ratings and characteristics curves 1n5711 and 1N6263 fig.1 typical variation of fwd. current vs forward. voltage for primary conduction through the schottky barrier fig.2 typical forward conduction curve of combination schottky barrier and pn junction guard ring fig.4 typical capacitance curve as a function of reverse voltage 0 0 0.01 0 0 1 2 20 40 60 80 2 2 5 0.5 0.5 5 5 0.1 1 1v 1v 10 100 2 v f v r t j=25 c v f i f c j i f ma ma pf fig.3 typical variation of reverse current at various temperatures 0 0 0.01 0.1 25 c 50 c 75 c 100 c 125 c 150 c 1 10 100 5 5 5 5 2 2 2 2 10 10 20 20 30 30 40 40 50v 50v v r i r a jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 2-6
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